band-gap reference

英 [bænd ɡæp ˈrefrəns] 美 [bænd ɡæp ˈrefrəns]

网络  带隙参考电压; 带隙基准电压; 带隙基准

计算机



双语例句

  1. Super Performance BiCMOS Band-Gap Voltage Reference
    一种高性能的BiCMOS带隙基准电压源
  2. An Auto-start Band-gap Reference Voltage Circuit with High Accuracy and Good Stability
    一种自启动高精度高稳定性基准电压源的设计
  3. Low voltage high PSRR band-gap voltage reference
    低电压、高PSRR的带隙电压基准源
  4. Chapter six designs the band-gap reference circuit.
    第六章介绍了本芯片内置的基准电压源的设计;
  5. Design of Band-gap Voltage Reference Source of the Ballast Controller
    电子镇流器控制器中带隙基准源的设计与实现
  6. A high-accuracy band-gap voltage reference circuit using trimming meets the critical voltage requirement of Li-Ion batteries.
    设计带修调的高精度带隙电压基准,满足锂离子电池对充电电压的严格要求;
  7. A high accuracy band-gap reference voltage without resistor is designed.
    设计了一种高准确度无电阻的带隙基准电压源。
  8. By improving the conventional band-gap voltage reference, an internal power supply for digital-analog hybrid integrated circuits is designed.
    本文结合带隙基准电压源设计了一种用于数模混合集成电路的内部电源。
  9. For low voltage and high precision applications, a standard CMOS low voltage band-gap reference circuit is introduced in this paper. Using second curvature compensation, this circuit makes the output voltage reach a lower temperature range.
    设计了一种标准CMOS工艺下的低电压带隙基准电路,该电路使用了温度的二阶曲率补偿技术,使输出电压达到了较低的温度系数。
  10. Realization of low voltage and low power cascode band-gap reference voltage source
    一种低压低功耗共源共栅带隙基准电压源的实现
  11. According to negative temperature coefficient of VBE and positive temperature coefficient of VT, a framework of band-gap voltage reference is investigated.
    同时利用PNP晶体管发射结电压的负温度特性和发射结差值电压的正温度特性设计了一个带隙基准电压源。
  12. A CMOS band-gap reference circuit with first-order temperature compensation is presented.
    阐述了一种采用了一阶温度补偿技术设计的CMOS带隙基准电压源电路。
  13. Analysing of low temperature coefficient voltage source with band-gap reference
    用能隙参考的低温度系数电压源分析
  14. Design and Realization of Band-gap Reference in LCD
    LCD驱动中的带隙基准电压源的设计与实现
  15. The designs of operational amplifier, band-gap reference, input voltage pre-regulator, sawtooth generator circuit and gate driver for power MOSFET are mainly designed in this dissertation.
    文中重点对芯片电路中的运算放大器电路、带隙基准电路、输入电压预调整电路、锯齿波发生器电路、开关MOS管驱动电路进行了设计。
  16. The band-gap voltage circuit is to provide the necessary current source bias voltage, and can serve as a built-in voltage reference to compare with analog signal.
    其中带隙电压电路提供放大器所需的电流源偏置电压,并可作为比较器内置基准电压源。
  17. Based on this, a new LDO circuit is proposed. The new circuit is composed by the PMOS regulator, the band-gap reference, the over-current protection module, soft-start module, the transient-enhanced module and so on.
    在此基础上,提出本文所设计的LDO电路,主要由PMOS调整管、带隙基准源、过流保护模块、软启动模块、瞬态增强模块构成。